The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface mounting circuits
Applications
LED
Battery charger
Motor and relay driver
Voltage regulation
| 屬性 | 數值 |
|---|---|
| 晶體管類型 | PNP |
| 最大直流集電極電流 | 2 A |
| 最大集電極-發射極電壓 | -60 V |
| 封裝類型 | SOT-23 |
| 安裝類型 | 表面貼裝 |
| 最大功率耗散 | 500 mW |
| 最小直流電流增益 | 250 |
| 晶體管配置 | 單 |
| 最大集電極-基極電壓 | -60 V |
| 最大發射極-基極電壓 | -5 V |
| 引腳數目 | 3 |
| 每片芯片元件數目 | 1 |
